Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 1.4986mm
- Input Capacitance Ciss Max Vds
- 660pF @ 15V
- Threshold Voltage
- 700mV
- Rds On Max Id Vgs
- 50m Ω @ 2.6A, 4.5V
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 5.2A
- Power Dissipation
- 2W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 26ns
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Direnç
- 50mOhm
- Max Power Dissipation
- 2W
- Vgsth Max Id
- 700mV @ 250μA
- Additional Feature
- ULTRA LOW RESISTANCE
- Temel Parça No
- IRF7307PBF
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Seri
- HEXFET®
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 20V
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 33 ns
- Number Of Elements
- 2
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj
- Surface Mount
- Yayın Yılı
- 1997
- RoHS Durumu
- ROHS3 Compliant
- Turn Off Delay Time
- 51 ns
- Gate Charge Qg Max Vgs
- 20nC @ 4.5V
- Continuous Drain Current Id
- 5.2A
- Fet Type
- N and P-Channel
- Parça Durumu
- Active
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