IRF7307PBF

Specifications

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

50m Ω @ 2.6A, 4.5V

Jedec95 Code

MS-012AA

Input Capacitance Ciss Max Vds

660pF @ 15V

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

20V

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Yayın Yılı

1997

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.05Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

20nC @ 4.5V

Drain Currentmax Abs Id

5.2A

Fet Type

N and P-Channel

Parça Durumu

Discontinued

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

20V

Current Continuous Drain Id25

5.2A 4.3A

Terminal Sayısı

8

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

21A

Montaj Tipi

Surface Mount

Vgsth Max Id

700mV @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL AND P-CHANNEL