Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Surface Mount
- Yayın Yılı
- 1997
- Voltage Rated Dc
- -30V
- Drain To Source Voltage Vdss
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 2
- Row Spacing
- 6.3 mm
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Turn Off Delay Time
- 25 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 12 Weeks
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- -30V
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 18 ns
- Genişlik
- 4.05mm
- Pulsed Drain Currentmax Idm
- 14A
- Montaj Tipi
- Surface Mount
- Turn On Delay Time
- 11 ns
- JESD-609 Kodu
- e3
- Nominal Vgs
- -1 V
- Continuous Drain Current Id
- -3.6A
- Fet Type
- 2 P-Channel (Dual)
- Parça Durumu
- Active
- Fet Feature
- Logic Level Gate
- Gate To Source Voltage Vgs
- 20V
- Transistor Application
- SWITCHING
- Recovery Time
- 80 ns
- Terminal Sayısı
- 8
- Current Continuous Drain Id25
- 3.6A
- Akım Değeri
- -3.6A
- Operating Mode
- ENHANCEMENT MODE
- Threshold Voltage
- -1V
- Rds On Max Id Vgs
- 100m Ω @ 1.8A, 10V
- Yükseklik
- 1.75mm
- Element Configuration
- Dual
- Input Capacitance Ciss Max Vds
- 440pF @ 25V
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