IRF7306PBF

Specifications

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

MS-012AA

Input Capacitance Ciss Max Vds

440pF @ 25V

Seri

HEXFET®

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

100m Ω @ 1.8A, 10V

Fabrika Tedarik Süresi

14 Weeks

Gate Charge Qg Max Vgs

25nC @ 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.1Ohm

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Yayın Yılı

1997

Paket

Bulk

Drain To Source Voltage Vdss

30V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Ürün Durumu

Active

Ds Breakdown Voltagemin

30V

Current Continuous Drain Id25

3.6A

Transistor Application

SWITCHING

Tedarikçi Cihaz Paketi

8-SO

Power Max

2W

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Discontinued

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Drain Currentmax Abs Id

3.6A

Power Dissipationmax Abs

1.4W

Temel Parça No

IRF7306PBF

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3