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Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 1997
- Voltage Rated Dc
- 30V
- Montaj
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn)
- Number Of Elements
- 2
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Turn Off Delay Time
- 22 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Seri
- HEXFET®
- Fall Time Typ
- 7.7 ns
- Uzunluk
- 4.9784mm
- Tepe Reflow Süresi (maks. sn)
- 30
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 30V
- Montaj Tipi
- Surface Mount
- Genişlik
- 3.9878mm
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 6.8 ns
- Nominal Vgs
- 1 V
- Gate To Source Voltage Vgs
- 20V
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Fet Feature
- Standard
- Continuous Drain Current Id
- 4.9A
- Recovery Time
- 71 ns
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 8
- Akım Değeri
- 4.9A
- Operating Mode
- ENHANCEMENT MODE
- Rds On Max Id Vgs
- 50m Ω @ 2.4A, 10V
- Threshold Voltage
- 1V
- Input Capacitance Ciss Max Vds
- 520pF @ 25V
- Element Configuration
- Dual
- Yükseklik
- 1.4986mm
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
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