Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Turn Off Delay Time
- 22 ns
- Yayın Yılı
- 2010
- Montaj
- Surface Mount
- RoHS Durumu
- RoHS Compliant
- Drain To Source Voltage Vdss
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 7.7 ns
- Uzunluk
- 4.9784mm
- Ambalaj
- Cut Tape (CT)
- Maks. Çalışma Sıcaklığı
- 150°C
- Rds On Max Id Vgs
- 50m Ω @ 2.4A, 10V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Yükseklik
- 1.4986mm
- Seri
- HEXFET®
- Input Capacitance Ciss Max Vds
- 520pF @ 25V
- Temel Parça No
- IRF7303QPBF
- Montaj Tipi
- Surface Mount
- Genişlik
- 3.9878mm
- Max Power Dissipation
- 2W
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 6.8 ns
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Fet Type
- 2 N-Channel (Dual)
- Parça Durumu
- Obsolete
- Fet Feature
- Standard
- Continuous Drain Current Id
- 4.9A
- Min. Çalışma Sıcaklığı
- -55°C
- Gate To Source Voltage Vgs
- 20V
- Rise Time
- 21ns
- Power Dissipation
- 2W
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