IRF7301PBF

Specifications

Rds On Max Id Vgs

50m Ω @ 2.6A, 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Seri

HEXFET®

Input Capacitance Ciss Max Vds

660pF @ 15V

Jedec95 Code

MS-012AA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

20V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

1996

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.05Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

20nC @ 4.5V

Drain Currentmax Abs Id

5.2A

Fet Feature

Logic Level Gate

Parça Durumu

Discontinued

Fet Type

2 N-Channel (Dual)

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Transistor Application

SWITCHING

Current Continuous Drain Id25

5.2A

Ds Breakdown Voltagemin

20V

Terminal Sayısı

8

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

21A

Yüzey Montaj

YES

Vgsth Max Id

700mV @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Temel Parça No

IRF7301PBF