IRF7105PBF

Specifications

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.1Ohm

Gate Charge Qg Max Vgs

27nC @ 10V

Jesd30 Code

R-PDSO-G8

Terminal Kaplaması

Matte Tin (Sn)

Yayın Yılı

2003

Drain To Source Voltage Vdss

25V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

100m Ω @ 1A, 10V

Jedec95 Code

MS-012AA

Input Capacitance Ciss Max Vds

330pF @ 15V

Seri

HEXFET®

Temel Parça No

IRF7105PBF

Terminal Formu

GULL WING

Power Dissipationmax Abs

2W

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

14A

Yüzey Montaj

YES

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Vgsth Max Id

3V @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Transistor Application

SWITCHING

Terminal Sayısı

8

Ds Breakdown Voltagemin

25V

Current Continuous Drain Id25

3.5A 2.3A

Fet Type

N and P-Channel

Parça Durumu

Discontinued

Fet Feature

Standard