IRF7104PBF

Specifications

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

20V

Yayın Yılı

1997

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Gate Charge Qg Max Vgs

25nC @ 10V

Drainsource On Resistancemax

0.25Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance Ciss Max Vds

290pF @ 15V

Seri

HEXFET®

Jedec95 Code

MS-012AA

Rds On Max Id Vgs

250m Ω @ 1A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Vgsth Max Id

3V @ 250μA

Additional Feature

LOGIC LEVEL COMPATIBLE

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

10A

Yüzey Montaj

YES

Power Dissipationmax Abs

2W

Terminal Formu

GULL WING

Temel Parça No

IRF7104PBF

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Drain Currentmax Abs Id

2.3A

Fet Type

2 P-Channel (Dual)

Parça Durumu

Discontinued

Fet Feature

Logic Level Gate

Current Continuous Drain Id25

2.3A

Ds Breakdown Voltagemin

20V