IRF7101PBF

Specifications

Input Capacitance Ciss Max Vds

320pF @ 15V

Seri

HEXFET®

Rds On Max Id Vgs

100m Ω @ 1.8A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

20V

Yayın Yılı

1997

Jesd30 Code

R-PDSO-G8

Gate Charge Qg Max Vgs

15nC @ 10V

Drainsource On Resistancemax

0.1Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Drain Currentmax Abs Id

3.5A

Fet Type

2 N-Channel (Dual)

Parça Durumu

Discontinued

Fet Feature

Logic Level Gate

Current Continuous Drain Id25

3.5A

Ds Breakdown Voltagemin

20V

Terminal Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Vgsth Max Id

3V @ 250μA

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

14A

Montaj Tipi

Surface Mount

Power Dissipationmax Abs

2W

Terminal Formu

GULL WING

Temel Parça No

IRF7101PBF