IPP026N10NF2SAKMA1

Specifications

Maks. Çalışma Sıcaklığı

+ 175 C

Fabrika Paket Adedi

1000

Power Dissipation Max

3.8W (Ta), 250W (Tc)

Paket

Tube

Vgsth Max Id

3.8V @ 169µA

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Channel Type

N

Seri

IPP026N10NF2S

Vgs Max

±20V

Pin Sayısı

3

Montaj Tipi

Through Hole

Kılıf / Paket

TO-220-3

Power Dissipation

250

Rds On Drainsource Resistance

2.6 mOhms

Id Continuous Drain Current

184 A

Vgs Th Gatesource Threshold Voltage

3.8 V

Fet Type

N-Channel

Channel Mode

Enhancement

Drive Voltage Max Rds On Min Rds On

6V, 10V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Vgs Gatesource Voltage

- 20 V, + 20 V

Input Capacitance Ciss Max Vds

7300 pF @ 50 V

Continuous Drain Current Id

184

Montaj Stili

Through Hole

Rds On Max Id Vgs

2.6mOhm @ 100A, 10V

Pd Power Dissipation

250 W

Qg Gate Charge

103 nC

Package Type

TO-220

Tedarikçi Cihaz Paketi

PG-TO220-3

Number Of Channels

1 Channel

Number Of Elements Per Chip

1

Transistor Polarity

N-Channel

Drain To Source Voltage Vdss

100 V

Technology

Si

Current Continuous Drain Id25

27A (Ta), 184A (Tc)

Ürün Tipi

MOSFET

Part Aliases

IPP026N10NF2S SP005548847

Gate Charge Qg Max Vgs

154 nC @ 10 V

Vds Drainsource Breakdown Voltage

100 V