IPG20N10S436AATMA1

Specifications

Avalanche Energy Rating Eas

60 mJ

Fet Feature

Standard

Number Of Elements

2

Yayın Yılı

2013

Turn Off Delay Time

4 ns

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F6

Turn On Delay Time

3 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

100V

Montaj

Surface Mount

Max Power Dissipation

43W

Kılıf / Paket

8-PowerVDFN

Kurşunsuz Kodu

yes

Fet Type

2 N-Channel (Dual)

Halogen Free

Halogen Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

6

Seri

Automotive, AEC-Q101, OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.5V @ 16μA

Gate Charge Qg Max Vgs

15nC @ 10V

Input Capacitance Ciss Max Vds

990pF @ 25V

Drainsource On Resistancemax

0.036Ohm

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

12 Weeks

Rise Time

1ns

Power Max

43W

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount, Wettable Flank

Rds On Max Id Vgs

36m Ω @ 17A, 10V

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

20A

Kurşunsuz

Contains Lead

Terminal Formu

FLAT