Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Fet Type
- 2 N-Channel (Dual)
- Halogen Free
- Halogen Free
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 8
- Seri
- OptiMOS™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 2.2V @ 10μA
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Input Capacitance Ciss Max Vds
- 1430pF @ 25V
- Drainsource On Resistancemax
- 0.026Ohm
- Ambalaj
- Cut Tape (CT)
- Power Max
- 33W
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 1.5ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Fall Time Typ
- 10 ns
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 26m Ω @ 17A, 10V
- REACH Uyumluluk Kodu
- not_compliant
- Continuous Drain Current Id
- 20A
- Kurşunsuz
- Contains Lead
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Parça Durumu
- Active
- Avalanche Energy Rating Eas
- 35 mJ
- Fet Feature
- Logic Level Gate
- Number Of Elements
- 2
- Yayın Yılı
- 2010
- Turn Off Delay Time
- 18 ns
- Gate To Source Voltage Vgs
- 16V
- Pin Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Reference Standard
- AEC-Q101
- Turn On Delay Time
- 5 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Kaplaması
- Tin (Sn)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
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