IPG20N06S4L11ATMA1

Specifications

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

11 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Montaj

Surface Mount

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

65W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

60V

Fet Feature

Logic Level Gate

Number Of Elements

2

Avalanche Energy Rating Eas

165 mJ

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2003

Turn Off Delay Time

58 ns

Gate To Source Voltage Vgs

16V

Pin Sayısı

8

Power Max

65W

Operating Mode

ENHANCEMENT MODE

Rise Time

3ns

Fabrika Tedarik Süresi

12 Weeks

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

11.2m Ω @ 17A, 10V

Fall Time Typ

19 ns

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

4020pF @ 25V

Gate Charge Qg Max Vgs

53nC @ 10V

Drainsource On Resistancemax

0.0112Ohm

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

20A

Terminal Formu

FLAT

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Halogen Free

Halogen Free

JESD-609 Kodu

e3