Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Terminal Kaplaması
- MATTE TIN
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Case Connection
- DRAIN
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Kılıf / Paket
- 8-PowerVDFN
- Max Power Dissipation
- 30W
- Montaj
- Surface Mount
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 55V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- Fet Feature
- Logic Level Gate
- Pin Sayısı
- 8
- Avalanche Energy Rating Eas
- 55 mJ
- Jesd30 Code
- R-PDSO-F6
- RoHS Durumu
- RoHS Compliant
- Pin Sayısı
- 8
- Yayın Yılı
- 2008
- Rds On Max Id Vgs
- 35m Ω @ 11A, 10V
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Power Max
- 30W
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.035Ohm
- Input Capacitance Ciss Max Vds
- 1730pF @ 25V
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Parça Durumu
- Obsolete
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Element Material
- SILICON
- Temel Parça No
- *PG20N06
- Terminal Formu
- FLAT
- Continuous Drain Current Id
- 20A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Type
- 2 N-Channel (Dual)
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- JESD-609 Kodu
- e3
- Vgsth Max Id
- 2.2V @ 15μA
- Drain To Source Voltage Vdss
- 55V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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