Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Fet Type
- 2 N-Channel (Dual)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 6
- Seri
- OptiMOS™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 2.2V @ 20μA
- Drain To Source Voltage Vdss
- 55V
- Drain Currentmax Abs Id
- 33A
- Gate Charge Qg Max Vgs
- 42nC @ 10V
- Input Capacitance Ciss Max Vds
- 2950pF @ 25V
- Drainsource On Resistancemax
- 0.023Ohm
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 35ns
- Operating Mode
- ENHANCEMENT MODE
- Montaj Tipi
- Surface Mount
- Fall Time Typ
- 75 ns
- Rds On Max Id Vgs
- 23m Ω @ 16A, 10V
- Continuous Drain Current Id
- 20A
- Terminal Formu
- FLAT
- Temel Parça No
- *PG20N06
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Obsolete
- Avalanche Energy Rating Eas
- 110 mJ
- Pin Sayısı
- 8
- Fet Feature
- Logic Level Gate
- Number Of Elements
- 2
- Turn Off Delay Time
- 40 ns
- Yayın Yılı
- 2008
- Pin Sayısı
- 8
- Gate To Source Voltage Vgs
- 16V
- RoHS Durumu
- RoHS Compliant
- Drain To Source Breakdown Voltage
- 55V
- Element Configuration
- Dual
- Jesd30 Code
- R-PDSO-F6
- Power Dissipation
- 45W
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Case Connection
- DRAIN
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