IPG20N06S2L50ATMA1

Specifications

Rds On Max Id Vgs

50m Ω @ 15A, 10V

Fall Time Typ

10 ns

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Power Max

51W

Rise Time

3ns

Fabrika Tedarik Süresi

10 Weeks

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.05Ohm

Input Capacitance Ciss Max Vds

560pF @ 25V

Gate Charge Qg Max Vgs

17nC @ 10V

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Temel Parça No

*PG20N06

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Continuous Drain Current Id

20A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Halogen Free

Halogen Free

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2V @ 19μA

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Turn On Delay Time

2 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

51W

ECCN Kodu

EAR99

Montaj

Surface Mount

Max Dual Supply Voltage

55V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Fet Feature

Logic Level Gate

Avalanche Energy Rating Eas

60 mJ

Reference Standard

AEC-Q101

Jesd30 Code

R-PDSO-F

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V