IPG20N04S4L11AATMA1

Specifications

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

41W

Kılıf / Paket

8-PowerVDFN

Max Power Dissipation

41W

Montaj

Surface Mount

Max Dual Supply Voltage

40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Fet Feature

Logic Level Gate

Jesd30 Code

R-PDSO-F6

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Gate To Source Voltage Vgs

16V

Yayın Yılı

2013

Rds On Max Id Vgs

11.6m Ω @ 17A, 10V

Montaj Tipi

Surface Mount, Wettable Flank

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.0116Ohm

Input Capacitance Ciss Max Vds

1990pF @ 25V

Gate Charge Qg Max Vgs

26nC @ 10V

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Continuous Drain Current Id

20A

REACH Uyumluluk Kodu

not_compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Halogen Free

Halogen Free

Fet Type

2 N-Channel (Dual)

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Vgsth Max Id

2.2V @ 15μA

Seri

Automotive, AEC-Q101, OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

6