IPG20N04S408ATMA1

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

40V

Current Continuous Drain Id25

20A

Kılıf / Paket

8-PowerVDFN

Avalanche Energy Rating Eas

230 mJ

Fet Feature

Standard

Number Of Elements

2

Yayın Yılı

2010

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F8

Input Capacitance Ciss Max Vds

2940pF @ 25V

Gate Charge Qg Max Vgs

36nC @ 10V

Drainsource On Resistancemax

0.0076Ohm

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Power Max

65W

Ambalaj

Cut Tape (CT)

Rds On Max Id Vgs

7.6m Ω @ 17A, 10V

Montaj Tipi

Surface Mount

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

FLAT

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

JESD-609 Kodu

e3

Fet Type

2 N-Channel (Dual)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

80A

Drain Currentmax Abs Id

20A

Drain To Source Voltage Vdss

40V

Vgsth Max Id

4V @ 30μA