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IKZ50N65ES5XKSA1

Infineon Technologies

IKZ50N65ES5XKSA1

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
-40°C~175°C TJ
Switching Energy
770μJ (on), 880μJ (off)
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Timenom Toff
366 ns
Turn On Time
60 ns
Montaj Tipi
Through Hole
Vceon Max Vge Ic
1.7V @ 15V, 50A
ECCN Kodu
EAR99
Transistor Application
POWER CONTROL
Parça Durumu
Active
Ambalaj
Tube
Gate Charge
120nC
Current Collector Pulsed Icm
200A
Number Of Elements
1
Reverse Recovery Time
62ns
Nem Hassasiyeti (MSL)
Not Applicable
Seri
TrenchStop™ 5
Kılıf / Paket
TO-247-4
Voltage Collector Emitter Breakdown Max
650V
Igbt Type
Trench
Polaritychannel Type
N-CHANNEL
Yüzey Montaj
NO
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Td Onoff25c
36ns/294ns
Giriş Tipi
Standard
RoHS Durumu
ROHS3 Compliant
Jesd30 Code
R-PSFM-T4
Fabrika Tedarik Süresi
26 Weeks
Test Conditions
400V, 25A, 23.1 Ω, 15V
Transistor Element Material
SILICON
Terminal Pozisyonu
SINGLE
Configuration
SINGLE WITH BUILT-IN DIODE
Terminal Sayısı
4
Currentcollector Ic Max
80A
Yayın Yılı
2014
Power Max
274W

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