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IKZ50N65EH5XKSA1

Infineon Technologies

IKZ50N65EH5XKSA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$11.60
  • 10+ pcs$10.94
  • 100+ pcs$10.32
  • 500+ pcs$9.74

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Fabrika Tedarik Süresi
16 Weeks
Test Conditions
400V, 25A, 12 Ω, 15V
Max Collector Current
85A
Transistor Element Material
SILICON
Terminal Pozisyonu
SINGLE
Pin Sayısı
4
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Kurşunsuz Kodu
yes
Terminal Sayısı
4
Max Power Dissipation
273W
Yayın Yılı
2008
Power Max
273W
Igbt Type
Trench
Polaritychannel Type
N-CHANNEL
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Td Onoff25c
20ns/250ns
RoHS Durumu
ROHS3 Compliant
Giriş Tipi
Standard
Kurşunsuz
Lead Free
Parça Durumu
Active
Ambalaj
Tube
Current Collector Pulsed Icm
200A
Gate Charge
109nC
Number Of Elements
1
Reverse Recovery Time
53 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Kaplaması
Tin (Sn)
Seri
TrenchStop™ 5
Halogen Free
Halogen Free
Kılıf / Paket
TO-247-4
Switching Energy
410μJ (on), 190μJ (off)
Çalışma Sıcaklığı
-40°C~175°C TJ
Collector Emitter Voltage Vceo
650V
JESD-609 Kodu
e3
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Timenom Toff
311 ns
Turn On Time
27 ns
Collectoremitter Breakdown Voltage
650V
Montaj Tipi
Through Hole

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