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IKW30N60DTPXKSA1

Infineon Technologies

IKW30N60DTPXKSA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$5.41
  • 10+ pcs$5.10
  • 100+ pcs$4.81
  • 500+ pcs$4.54

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Max Power Dissipation
200W
Yayın Yılı
2016
Power Max
200W
Jesd30 Code
R-PSFM-T3
Fabrika Tedarik Süresi
16 Weeks
Test Conditions
400V, 30A, 10.5 Ω, 15V
Max Collector Current
53A
Transistor Element Material
SILICON
Terminal Pozisyonu
SINGLE
Configuration
SINGLE WITH BUILT-IN DIODE
Kurşunsuz Kodu
yes
Terminal Sayısı
3
Igbt Type
Trench Field Stop
Polaritychannel Type
N-CHANNEL
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Td Onoff25c
15ns/179ns
Giriş Tipi
Standard
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Active
Ambalaj
Tube
Current Collector Pulsed Icm
90A
Gate Charge
130nC
Number Of Elements
1
Reverse Recovery Time
76 ns
Nem Hassasiyeti (MSL)
Not Applicable
Terminal Kaplaması
Tin (Sn)
Seri
TrenchStop™
Kılıf / Paket
TO-247-3
Montaj
Through Hole
Montaj Tipi
Through Hole
Vceon Max Vge Ic
1.8V @ 15V, 30A
ECCN Kodu
EAR99
Transistor Application
POWER CONTROL
Switching Energy
710μJ (on), 420μJ (off)
Çalışma Sıcaklığı
-40°C~175°C TJ
Collector Emitter Voltage Vceo
1.8V
JESD-609 Kodu
e3
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Timenom Toff
279 ns
Turn On Time
38 ns

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