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Infineon Technologies

IKN01N60RC2ATMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.31
  • 10+ pcs$0.29
  • 100+ pcs$0.28
  • 500+ pcs$0.26

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Reverse Recovery Time Trr
59.5 ns
Montaj Tipi
Surface Mount
Td Onoff25c
5.6ns/80ns
Power Dissipation
5.1W
Gate Charge
9 nC
Currentcollector Ic Max
2.2 A
Çalışma Sıcaklığı
-40°C ~ 150°C (TJ)
Maximum Gate Emitter Voltage
20V
Montaj Stili
SMD/SMT
Maximum Collector Emitter Voltage
600 V
Current Collector Pulsed Icm
3 A
Maks. Çalışma Sıcaklığı
+ 150 C
Power Max
5.1 W
Tedarikçi Cihaz Paketi
PG-SOT223-3
Voltage Collector Emitter Breakdown Max
600 V
Minimum Operating Temperature
- 40 C
Configuration
Single
Pd Power Dissipation
5.1 W
Collectoremitter Saturation Voltage
2V
RoHS
Details
Continuous Collector Current
2.2A
Fabrika Paket Adedi
3000
Collector Emitter Voltage Vceo Max
600 V
Ambalaj
MouseReel
Msl
MSL 1 - Unlimited
Test Conditions
400V, 1A, 49Ohm, 15V
Ürün Durumu
Active
Kılıf / Paket
TO-261-4, TO-261AA
Switching Energy
25.1μJ (on), 13.5μJ (off)
Package Type
PG-SOT223-3
Technology
Si
Vceon Max Vge Ic
2.3V @ 15V, 1A
Ürün Tipi
IGBT Transistors
Giriş Tipi
Standard
Temel Ürün No
IKN01N
Part Aliases
IKN01N60RC2 SP005547444
Continuous Collector Current At25 C
2.2 A

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