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IKD10N60RFAATMA1

Infineon Technologies

IKD10N60RFAATMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.10
  • 10+ pcs$1.04
  • 100+ pcs$0.98
  • 500+ pcs$0.92

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Turn Off Timenom Toff
198 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Transistor Element Material
SILICON
Fabrika Tedarik Süresi
17 Weeks
Polaritychannel Type
N-CHANNEL
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Conditions
400V, 10A, 26 Ω, 15V
Ambalaj
Tape & Reel (TR)
Seri
Automotive, AEC-Q101, TrenchStop™
Switching Energy
190μJ (on), 160μJ (off)
Terminal Formu
GULL WING
Case Connection
COLLECTOR
Vceon Max Vge Ic
2.5V @ 15V, 10A
Terminal Sayısı
2
Giriş Tipi
Standard
Kurşunsuz
Contains Lead
Turn On Time
27 ns
Montaj
Surface Mount
Collectoremitter Breakdown Voltage
600V
Reverse Recovery Time
72 ns
RoHS Durumu
ROHS3 Compliant
Halogen Free
Halogen Free
Jesd30 Code
R-PSSO-G2
Collector Emitter Voltage Vceo
600V
Montaj Tipi
Surface Mount
Yayın Yılı
2014
Max Power Dissipation
150W
Td Onoff25c
12ns/168ns
Number Of Elements
1
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gate Charge
64nC
Igbt Type
Trench
Çalışma Sıcaklığı
-40°C~175°C TJ
Max Collector Current
20A
Current Collector Pulsed Icm
30A
Transistor Application
POWER CONTROL
Parça Durumu
Not For New Designs
Power Max
150W
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED

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