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IKD10N60R

Infineon Technologies

IKD10N60R

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.68
  • 10+ pcs$1.58
  • 100+ pcs$1.49
  • 500+ pcs$1.41

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

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Technical team support

Specifications

Gate Charge
64nC
Igbt Type
Trench
Currentcollector Ic Max
20A
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
1 (Unlimited)
Td Onoff25c
14ns/192ns
Number Of Elements
1
Montaj Tipi
Surface Mount
Power Dissipationmax Abs
150W
Yayın Yılı
2011
Temel Parça No
*KD10N60
Jesd30 Code
R-PSSO-G2
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
JESD-609 Kodu
e3
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
SINGLE
Transistor Application
POWER CONTROL
Parça Durumu
Obsolete
Power Max
150W
Terminal Kaplaması
Tin (Sn)
Current Collector Pulsed Icm
30A
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-40°C~175°C TJ
Seri
TrenchStop®
Switching Energy
590μJ
Terminal Formu
GULL WING
Yüzey Montaj
YES
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Gateemitter Thr Voltagemax
5.7V
Test Conditions
400V, 10A, 23 Ω, 15V
Ambalaj
Cut Tape (CT)
Polaritychannel Type
N-CHANNEL
Qualification Status
Not Qualified
Transistor Element Material
SILICON
Gateemitter Voltagemax
20V
Voltage Collector Emitter Breakdown Max
600V
Turn Off Timenom Toff
428 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Reverse Recovery Time
62ns
RoHS Durumu
RoHS Compliant

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