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Infineon Technologies

IKD08N65ET6ARMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.40
  • 10+ pcs$1.32
  • 100+ pcs$1.25
  • 500+ pcs$1.18

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RoHS

Compliant

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Specifications

Montaj Tipi
Surface Mount
Reverse Recovery Time Trr
43 ns
Currentcollector Ic Max
15 A
Gate Charge
17 nC
Igbt Type
Trench Field Stop
Power Dissipation
47
Td Onoff25c
20ns/59ns
Current Collector Pulsed Icm
25 A
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Montaj Stili
Through Hole
Çalışma Sıcaklığı
-40°C ~ 175°C (TJ)
Tedarikçi Cihaz Paketi
PG-TO252-3
Maks. Çalışma Sıcaklığı
+ 175 C
Power Max
47 W
Fabrika Paket Adedi
3000
Continuous Collector Current
15
Collectoremitter Saturation Voltage
1.5
RoHS
Details
Configuration
Single
Pd Power Dissipation
27.5 W
Tradename
TRENCHSTOP
Minimum Operating Temperature
- 40 C
Voltage Collector Emitter Breakdown Max
650 V
Switching Energy
110μJ (on), 40μJ (off)
Msl
MSL 1 - Unlimited
Test Conditions
400V, 5A, 47Ohm, 15V
Ürün Durumu
Not For New Designs
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Voltage Vceo Max
650 V
Ambalaj
MouseReel
Giriş Tipi
Standard
Ürün Tipi
IGBT Transistors
Vceon Max Vge Ic
1.9V @ 15V, 5A
Technology
Si
Part Aliases
IKD08N65ET6 SP004275470
Continuous Collector Current At25 C
16 A
Temel Ürün No
IKD08N65

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