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Infineon Technologies

IKD06N60RC2ATMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.72
  • 10+ pcs$0.68
  • 100+ pcs$0.64
  • 500+ pcs$0.61

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RoHS

Compliant

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Specifications

Montaj Tipi
Surface Mount
Reverse Recovery Time Trr
98 ns
Currentcollector Ic Max
11.7 A
Igbt Type
Trench Field Stop
Power Dissipation
51.7
Gate Charge
31 nC
Td Onoff25c
6ns/129ns
Current Collector Pulsed Icm
18 A
Çalışma Sıcaklığı
-40°C ~ 175°C (TJ)
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Montaj Stili
SMD/SMT
Tedarikçi Cihaz Paketi
PG-TO252-3
Maks. Çalışma Sıcaklığı
+ 175 C
Power Max
51.7 W
Fabrika Paket Adedi
2500
Collectoremitter Saturation Voltage
2
Continuous Collector Current
11.7
Configuration
Single
Pd Power Dissipation
51.7 W
Voltage Collector Emitter Breakdown Max
600 V
Tradename
TRENCHSTOP
Minimum Operating Temperature
- 40 C
Switching Energy
170μJ (on), 80μJ (off)
Ambalaj
Cut Tape
Collector Emitter Voltage Vceo Max
600 V
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Ürün Durumu
Active
Test Conditions
400V, 6A, 49Ohm, 15V
Msl
MSL 1 - Unlimited
Giriş Tipi
Standard
Ürün Tipi
IGBT Transistors
Vceon Max Vge Ic
2.3V @ 15V, 6A
Technology
Si
Continuous Collector Current At25 C
11.7 A
Part Aliases
IKD06N60RC2 SP005349953
Temel Ürün No
IKD06N60

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