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IKD06N60RAATMA2

Infineon Technologies

IKD06N60RAATMA2

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.27
  • 10+ pcs$1.20
  • 100+ pcs$1.13
  • 500+ pcs$1.07

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Collector Emitter Voltage Vceo
600V
Jesd30 Code
R-PSSO-G2
Montaj Tipi
Surface Mount
Yayın Yılı
2012
Temel Parça No
*KD06N60
Td Onoff25c
12ns/127ns
Number Of Elements
1
Gate Charge
48nC
Additional Feature
LOW CONDUCTION LOSS
Igbt Type
Trench
Element Configuration
Single
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
-40°C~175°C TJ
ECCN Kodu
EAR99
Max Collector Current
12A
Current Collector Pulsed Icm
18A
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Application
GENERAL PURPOSE
Parça Durumu
Last Time Buy
Power Max
100W
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
Turn Off Timenom Toff
335 ns
Pin Sayısı
3
Polaritychannel Type
N-CHANNEL
Fabrika Tedarik Süresi
18 Weeks
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Conditions
400V, 6A, 23 Ω, 15V
Ambalaj
Tape & Reel (TR)
Reference Standard
AEC-Q101
Seri
TrenchStop®
Terminal Formu
GULL WING
Case Connection
COLLECTOR
Vceon Max Vge Ic
2.1V @ 15V, 6A
Kurşunsuz
Contains Lead
Terminal Sayısı
2
Giriş Tipi
Standard
Turn On Time
22 ns
Montaj
Surface Mount
Halogen Free
Halogen Free

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