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C3 ChipZentronix
IKD06N60RAATMA1

Infineon Technologies

IKD06N60RAATMA1

Single IGBTs

In StockRoHS: Compliant

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Conditions
400V, 6A, 23 Ω, 15V
Ambalaj
Tape & Reel (TR)
Reference Standard
AEC-Q101
Switching Energy
110μJ (on), 220μJ (off)
Seri
TrenchStop™
Terminal Formu
GULL WING
Transistor Element Material
SILICON
Turn Off Timenom Toff
335 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Polaritychannel Type
N-CHANNEL
Fabrika Tedarik Süresi
14 Weeks
Collectoremitter Breakdown Voltage
600V
Turn On Time
22 ns
Montaj
Surface Mount
Max Breakdown Voltage
600V
Reverse Recovery Time
68 ns
RoHS Durumu
ROHS3 Compliant
Case Connection
COLLECTOR
Vceon Max Vge Ic
2.1V @ 15V, 6A
Terminal Sayısı
2
Giriş Tipi
Standard
Td Onoff25c
12ns/127ns
Number Of Elements
1
Gate Charge
48nC
Additional Feature
LOW CONDUCTION LOSS
Igbt Type
Trench Field Stop
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
2.1V
Jesd30 Code
R-PSSO-G2
Montaj Tipi
Surface Mount
Yayın Yılı
2012
Max Power Dissipation
100W
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
SINGLE
Transistor Application
GENERAL PURPOSE
Parça Durumu
Not For New Designs
Power Max
100W
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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