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IKD06N60R

Infineon Technologies

IKD06N60R

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.70
  • 10+ pcs$0.66
  • 100+ pcs$0.63
  • 500+ pcs$0.59

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Kurşunsuz Kodu
no
Currentcollector Ic Max
12A
Igbt Type
Trench
Gate Charge
48nC
Number Of Elements
1
Td Onoff25c
12ns/127ns
Temel Parça No
*KD06N60
Montaj Tipi
Surface Mount
Power Dissipationmax Abs
100W
Yayın Yılı
2006
Jesd30 Code
R-PSSO-G2
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Power Max
100W
Parça Durumu
Obsolete
Transistor Application
POWER CONTROL
Terminal Pozisyonu
SINGLE
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
JESD-609 Kodu
e3
ECCN Kodu
EAR99
Current Collector Pulsed Icm
18A
Terminal Kaplaması
Tin (Sn)
Çalışma Sıcaklığı
-40°C~175°C TJ
Yüzey Montaj
YES
Terminal Formu
GULL WING
Switching Energy
330μJ
Seri
TrenchStop®
Ambalaj
Cut Tape (CT)
Test Conditions
400V, 6A, 23 Ω, 15V
Gateemitter Thr Voltagemax
5.7V
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification Status
Not Qualified
Polaritychannel Type
N-CHANNEL
Configuration
SINGLE WITH BUILT-IN DIODE
Turn Off Timenom Toff
335 ns
Voltage Collector Emitter Breakdown Max
600V
Transistor Element Material
SILICON
Gateemitter Voltagemax
20V
Pin Sayısı
3
REACH Uyumluluk Kodu
compliant

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