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IKD04N60RFATMA1

Infineon Technologies

IKD04N60RFATMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.37
  • 10+ pcs$1.29
  • 100+ pcs$1.22
  • 500+ pcs$1.15

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Parça Durumu
Active
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Uzunluk
6.73mm
Max Collector Current
6A
Td Onoff25c
12ns/116ns
Number Of Elements
1
Yükseklik
2.41mm
Element Configuration
Single
Currentcollector Ic Max
8A
Collector Emitter Voltage Vceo
2.4V
Jesd30 Code
R-PSSO-G2
Yayın Yılı
2012
Max Power Dissipation
30W
Switchingfrequency
-30kHz
Turn On Time
18 ns
Max Breakdown Voltage
600V
Reverse Recovery Time
34 ns
REACH Uyumluluk Kodu
not_compliant
Case Connection
COLLECTOR
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Conditions
400V, 4A, 43 Ω, 15V
Switching Energy
60μJ (on), 50μJ (off)
Seri
TrenchStop™
Terminal Formu
GULL WING
Transistor Element Material
SILICON
Fabrika Tedarik Süresi
16 Weeks
JESD-609 Kodu
e3
Transistor Application
POWER CONTROL
Power Max
75W
Çalışma Sıcaklığı
-40°C~175°C TJ
Terminal Kaplaması
Tin (Sn)
Current Collector Pulsed Icm
12A
ECCN Kodu
EAR99
Genişlik
6.22mm
Gate Charge
27nC
Igbt Type
Trench
Kurşunsuz Kodu
no
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount

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