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IKD04N60RFAATMA1

Infineon Technologies

IKD04N60RFAATMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.88
  • 10+ pcs$0.83
  • 100+ pcs$0.78
  • 500+ pcs$0.74

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RoHS

Compliant

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Specifications

Jesd30 Code
R-PSSO-G2
Collector Emitter Voltage Vceo
600V
Montaj Tipi
Surface Mount
Yayın Yılı
2002
Max Power Dissipation
75W
Td Onoff25c
12ns/116ns
Number Of Elements
1
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gate Charge
27nC
Igbt Type
Trench
Çalışma Sıcaklığı
-40°C~175°C TJ
Current Collector Pulsed Icm
12A
Max Collector Current
8A
Transistor Application
POWER CONTROL
Parça Durumu
Not For New Designs
Power Max
75W
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
SINGLE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Turn Off Timenom Toff
216 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Transistor Element Material
SILICON
Fabrika Tedarik Süresi
17 Weeks
Polaritychannel Type
N-CHANNEL
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Conditions
400V, 4A, 43 Ω, 15V
Ambalaj
Tape & Reel (TR)
Seri
Automotive, AEC-Q101, TrenchStop™
Switching Energy
60μJ (on), 50μJ (off)
Terminal Formu
GULL WING
Case Connection
COLLECTOR
Vceon Max Vge Ic
2.5V @ 15V, 4A
Terminal Sayısı
2
Giriş Tipi
Standard
Kurşunsuz
Contains Lead
Turn On Time
18 ns
Montaj
Surface Mount
Collectoremitter Breakdown Voltage
600V
RoHS Durumu
ROHS3 Compliant

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