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IHW50N65R5XKSA1

Infineon Technologies

IHW50N65R5XKSA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$2.90
  • 10+ pcs$2.74
  • 100+ pcs$2.59
  • 500+ pcs$2.44

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Vceon Max Vge Ic
1.7V @ 15V, 50A
Td Onoff25c
26ns/220ns
Fabrika Tedarik Süresi
16 Weeks
Turn On Time
51 ns
Current Collector Pulsed Icm
150A
Gate Charge
230nC
Collectoremitter Breakdown Voltage
650V
Yayın Yılı
2013
Montaj
Through Hole
Kılıf / Paket
TO-247-3
Test Conditions
400V, 25A, 8 Ω, 15V
Max Power Dissipation
282W
Max Collector Current
80A
Transistor Element Material
SILICON
Pin Sayısı
3
Seri
TrenchStop®
Terminal Kaplaması
Tin (Sn)
Montaj Tipi
Through Hole
Parça Durumu
Active
JESD-609 Kodu
e3
Element Configuration
Single
Switching Energy
740μJ (on), 180μJ (off)
Collector Emitter Voltage Vceo
650V
Power Max
282W
Reverse Recovery Time
95 ns
Transistor Application
POWER CONTROL
Çalışma Sıcaklığı
-40°C~175°C TJ
Kurşunsuz Kodu
yes
Polaritychannel Type
N-CHANNEL
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Sayısı
3
Halogen Free
Halogen Free
Kurşunsuz
Lead Free
Ambalaj
Tube
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Elements
1
Turn Off Timenom Toff
261 ns
Giriş Tipi
Standard

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