Volume pricing
- 1+ pcs$5.02
- 10+ pcs$4.74
- 100+ pcs$4.47
- 500+ pcs$4.21
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 333W
- Collector Emitter Voltage Vceo
- 1.1kV
- Voltage Collector Emitter Breakdown Max
- 1100V
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- N-CHANNEL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Giriş Tipi
- Standard
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Turn Off Timenom Toff
- 470 ns
- Transistor Application
- POWER CONTROL
- Gateemitter Thr Voltagemax
- 6.4V
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- Yayın Yılı
- 2015
- Montaj
- Through Hole
- Kılıf / Paket
- TO-247-3
- Test Conditions
- 600V, 30A, 15 Ω, 15V
- Collectoremitter Breakdown Voltage
- 1.1kV
- Gate Charge
- 180nC
- Max Collector Current
- 60A
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 333W
- Fabrika Tedarik Süresi
- 26 Weeks
- Current Collector Pulsed Icm
- 90A
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Vceon Max Vge Ic
- 1.75V @ 15V, 30A
- Qualification Status
- Not Qualified
- Td Onoff25c
- -/350ns
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Switching Energy
- 1.15mJ (off)
- Gateemitter Voltagemax
- 20V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
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