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IGZ100N65H5XKSA1

Infineon Technologies

IGZ100N65H5XKSA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$3.06
  • 10+ pcs$2.89
  • 100+ pcs$2.73
  • 500+ pcs$2.57

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Giriş Tipi
Standard
Parça Durumu
Active
Transistor Element Material
SILICON
Collector Emitter Voltage Vceo
650V
Gate Charge
210nC
Collectoremitter Breakdown Voltage
650V
Montaj Tipi
Through Hole
Case Connection
COLLECTOR
Max Power Dissipation
536W
Configuration
SINGLE
Igbt Type
Trench
Kurşunsuz
Lead Free
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Halogen Free
Halogen Free
Td Onoff25c
30ns/421ns
Fabrika Tedarik Süresi
16 Weeks
Power Max
536W
Test Conditions
400V, 50A, 8 Ω, 15V
Vceon Max Vge Ic
2.1V @ 15V, 100A
Switching Energy
850μJ (on), 770μJ (off)
Kurşunsuz Kodu
yes
Montaj
Through Hole
Transistor Application
POWER CONTROL
Current Collector Pulsed Icm
400A
Pin Sayısı
4
Polaritychannel Type
N-CHANNEL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
TO-247-4
Terminal Sayısı
4
Çalışma Sıcaklığı
-40°C~175°C TJ
Turn On Time
40 ns
Max Collector Current
161A
Terminal Kaplaması
Tin (Sn)
Turn Off Timenom Toff
485 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Number Of Elements
1
JESD-609 Kodu
e3
Ambalaj
Tube

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