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IGW30N60TPXKSA1

Infineon Technologies

IGW30N60TPXKSA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.43
  • 10+ pcs$1.35
  • 100+ pcs$1.27
  • 500+ pcs$1.20

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Power Max
200W
Fabrika Tedarik Süresi
16 Weeks
Td Onoff25c
15ns/179ns
Vceon Max Vge Ic
1.8V @ 15V, 30A
Test Conditions
400V, 30A, 10.5 Ω, 15V
Igbt Type
Trench Field Stop
Configuration
SINGLE
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Collectoremitter Breakdown Voltage
600V
Montaj Tipi
Through Hole
Gate Charge
130nC
Max Power Dissipation
200W
Parça Durumu
Active
Transistor Element Material
SILICON
Giriş Tipi
Standard
Collector Emitter Voltage Vceo
1.8V
Nem Hassasiyeti (MSL)
Not Applicable
Number Of Elements
1
JESD-609 Kodu
e3
Ambalaj
Tube
Terminal Pozisyonu
SINGLE
Jesd30 Code
R-PSFM-T3
Yayın Yılı
2006
Seri
TrenchStop™
Turn On Time
38 ns
Çalışma Sıcaklığı
-40°C~175°C TJ
Terminal Sayısı
3
Kılıf / Paket
TO-247-3
RoHS Durumu
ROHS3 Compliant
Turn Off Timenom Toff
279 ns
Terminal Kaplaması
Tin (Sn)
Max Collector Current
53A
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Montaj
Through Hole
Transistor Application
POWER CONTROL
Current Collector Pulsed Icm
90A
Switching Energy
710μJ (on), 420μJ (off)
Kurşunsuz Kodu
yes
Polaritychannel Type
N-CHANNEL

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