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IGP30N65H5XKSA1

Infineon Technologies

IGP30N65H5XKSA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.75
  • 10+ pcs$0.71
  • 100+ pcs$0.67
  • 500+ pcs$0.63

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Jesd30 Code
R-PSFM-T3
Terminal Pozisyonu
SINGLE
Power Max
188W
Jedec95 Code
TO-220AB
Collector Emitter Voltage Vceo
650V
Turn Off Timenom Toff
224 ns
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Giriş Tipi
Standard
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Polaritychannel Type
N-CHANNEL
Ambalaj
Tube
Kurşunsuz
Lead Free
Halogen Free
Halogen Free
Terminal Sayısı
3
Çalışma Sıcaklığı
-40°C~175°C TJ
Kurşunsuz Kodu
yes
Transistor Application
POWER CONTROL
Max Power Dissipation
188W
Transistor Element Material
SILICON
Max Collector Current
55A
Gate Charge
70nC
Collectoremitter Breakdown Voltage
650V
Test Conditions
400V, 15A, 23 Ω, 15V
Yayın Yılı
2013
Montaj
Through Hole
Kılıf / Paket
TO-220-3
Td Onoff25c
19ns/177ns
Vceon Max Vge Ic
2.1V @ 15V, 30A
Current Collector Pulsed Icm
90A
Fabrika Tedarik Süresi
16 Weeks
Turn On Time
28 ns
JESD-609 Kodu
e3
Switching Energy
280μJ (on), 100μJ (off)
Case Connection
COLLECTOR
Configuration
SINGLE
Montaj Tipi
Through Hole
Parça Durumu
Active

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