Volume pricing
- 1+ pcs$2.19
- 10+ pcs$2.07
- 100+ pcs$1.95
- 500+ pcs$1.84
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Package Shape
- RECTANGULAR
- Operating Temperaturemin
- -40 °C
- Paket
- Tube
- Collector Currentmax Ic
- 42 A
- Giriş Tipi
- Standard
- Tedarikçi Cihaz Paketi
- PG-TO220-3-1
- Üretici Parça No
- IGP20N65H5XKSA1
- Number Of Elements
- 1
- Polaritychannel Type
- N-CHANNEL
- Package Type
- TO-220-3
- Risk Rank
- 1.52
- Package Body Material
- PLASTIC/EPOXY
- Voltage Collector Emitter Breakdown Max
- 650 V
- Power Dissipation
- 125
- Currentcollector Ic Max
- 42 A
- Maximum Collector Emitter Voltage
- 650 V
- Terminal Kaplaması
- Tin (Sn)
- Switching Energy
- 170μJ (on), 60μJ (off)
- Case Connection
- COLLECTOR
- Collectoremitter Saturation Voltage
- 1.65
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Temel Ürün No
- IGP20N65
- Reflow Temperaturemax S
- NOT SPECIFIED
- Configuration
- Single
- Current Collector Pulsed Icm
- 60 A
- Td Onoff25c
- 18ns/156ns
- Vceon Max Vge Ic
- 2.1V @ 15V, 20A
- Yüzey Montaj
- NO
- Transistor Element Material
- SILICON
- Part Life Cycle Code
- Active
- Kılıf / Paket
- TO-220-3
- Gate Charge
- 48 nC
- Terminal Formu
- THROUGH-HOLE
- Package Style
- FLANGE MOUNT
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Jedec95 Code
- TO-220AB
- Ihs Manufacturer
- INFINEON TECHNOLOGIES AG
- Maximum Gate Emitter Voltage
- 20V
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