IGOT65R045D2AUMA1

Specifications

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Configuration

Single

Pd Power Dissipation

104 W

Vgs Gatesource Voltage

- 10 V

Number Of Channels

1 Channel

Tip

GaN Power Transistor

Rds On Drainsource Resistance

54 mOhms

Vgs Th Gatesource Threshold Voltage

1.6 V

Vds Drainsource Breakdown Voltage

650 V

Montaj Stili

SMD/SMT

Moisture Sensitive

Yes

Transistor Polarity

N-Channel

Kılıf / Paket

PG-DSO-20

Transistor Type

1 N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

8.4 nC