IGLT65R045D2ATMA1

Specifications

Qg Gate Charge

8.4 nC

Id Continuous Drain Current

38 A

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Type

1 N-Channel

Kılıf / Paket

PG-HDSOP-16

Transistor Polarity

N-Channel

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

650 V

Vgs Th Gatesource Threshold Voltage

1.6 V

Rds On Drainsource Resistance

54 mOhms

Tip

GaN Power Transistor

Vgs Gatesource Voltage

- 10 V

Number Of Channels

1 Channel

Pd Power Dissipation

125 W

Configuration

Single

Minimum Operating Temperature

- 55 C