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IGB30N60H3ATMA1

Infineon Technologies

IGB30N60H3ATMA1

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$3.50
  • 10+ pcs$3.30
  • 100+ pcs$3.12
  • 500+ pcs$2.94

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Currentcollector Ic Max
60A
Jesd30 Code
R-PSSO-G2
Power Max
187W
Terminal Pozisyonu
SINGLE
Voltage Collector Emitter Breakdown Max
600V
Giriş Tipi
Standard
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Timenom Toff
262 ns
Terminal Sayısı
2
Ambalaj
Tape & Reel (TR)
Polaritychannel Type
N-CHANNEL
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kurşunsuz Kodu
no
Çalışma Sıcaklığı
-40°C~175°C TJ
Terminal Formu
GULL WING
Transistor Application
POWER CONTROL
Yüzey Montaj
YES
Transistor Element Material
SILICON
Yayın Yılı
2005
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
REACH Uyumluluk Kodu
not_compliant
Test Conditions
400V, 30A, 10.5 Ω, 15V
Gate Charge
165nC
Fabrika Tedarik Süresi
16 Weeks
Turn On Time
40 ns
Current Collector Pulsed Icm
120A
ECCN Kodu
EAR99
Qualification Status
Not Qualified
Vceon Max Vge Ic
2.4V @ 15V, 30A
Pin Sayısı
4
Td Onoff25c
18ns/207ns
Case Connection
COLLECTOR
Switching Energy
1.17mJ
JESD-609 Kodu
e3
Temel Parça No
GB30N60
Montaj Tipi
Surface Mount
Parça Durumu
Active

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