IGB01N120H2ATMA1

Specifications

Çalışma Sıcaklığı

-40°C~150°C TJ

Terminal Formu

GULL WING

Kurşunsuz Kodu

no

Transistor Application

SWITCHING

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Giriş Tipi

Standard

RoHS Durumu

ROHS3 Compliant

Polaritychannel Type

NPN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

2

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Collector Emitter Voltage Vceo

1.2kV

Voltage Collector Emitter Breakdown Max

1200V

Jesd30 Code

R-PSSO-G2

Power Max

28W

Pin Sayısı

3

JESD-609 Kodu

e3

Element Configuration

Single

Case Connection

COLLECTOR

Switching Energy

140μJ

Parça Durumu

Last Time Buy

Montaj Tipi

Surface Mount

Vceon Max Vge Ic

2.8V @ 15V, 1A

Pin Sayısı

4

Qualification Status

Not Qualified

Td Onoff25c

13ns/370ns

Contact Plating

Tin

Current Collector Pulsed Icm

3.5A

Max Power Dissipation

28W

Max Collector Current

3.2A

Yüzey Montaj

YES

Transistor Element Material

SILICON

Collectoremitter Breakdown Voltage

1.2kV

Gate Charge

8.6nC

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Yayın Yılı

2007

Test Conditions

800V, 1A, 241 Ω, 15V