IAUC60N04S6N031HATMA1

Specifications

Pin Sayısı

8

Drain To Source Voltage Vdss

40V

Qualification

AEC-Q101

Rds On Max Id Vgs

3.1mOhm @ 30A, 10V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Transistor Polarity

N Channel

Channel Mode

Enhancement

Continuous Drain Current Id

60A

Power Max

75W (Tc)

Gate Charge Qg Max Vgs

30nC @ 10V

Rds On Drainsource Resistance

3.1 mOhms

Input Capacitance Ciss Max Vds

1922pF @ 25V

Temel Ürün No

IAUC60

Typical Turnon Delay Time

5 ns

Vds Drainsource Breakdown Voltage

40 V

Id Continuous Drain Current

113 A

Vgsth Max Id

3V @ 25μA

Minimum Operating Temperature

- 55 C

Vgs Gatesource Voltage

- 20 V, + 20 V

Rise Time

2 ns

Pd Power Dissipation

75 W

Fabrika Paket Adedi

5000

Ürün Tipi

MOSFET

Fet Feature

Standard

Vgs Th Gatesource Threshold Voltage

3 V

Current Continuous Drain Id25

60A (Tj)

Ambalaj

Cut Tape

Tedarikçi Cihaz Paketi

PG-TDSON-8-56

Number Of Channels

1 Channel

Tradename

OptiMOS

Montaj Tipi

Surface Mount

Montaj Stili

SMD/SMT

Fet Type

2 N-Channel (Half Bridge)

Kılıf / Paket

8-PowerVDFN

Channel Type

N

Qg Gate Charge

23 nC

Ürün Durumu

Active

Maks. Çalışma Sıcaklığı

+ 175 C

Technology

Si

Package Type

SuperSO8 5 x 6