IAUC60N04S6L030HATMA1

Specifications

Number Of Channels

2 Channel

Ambalaj

Cut Tape

Tedarikçi Cihaz Paketi

PG-TDSON-8-56

Current Continuous Drain Id25

60A (Tj)

Vgs Th Gatesource Threshold Voltage

2 V

Fet Feature

Logic Level Gate

Ürün Tipi

MOSFET

Fabrika Paket Adedi

5000

Pd Power Dissipation

75 W

Rise Time

2 ns

Vgs Gatesource Voltage

- 16 V, + 16 V

Minimum Operating Temperature

- 55 C

Vgsth Max Id

2V @ 25μA

Id Continuous Drain Current

119 A

Vds Drainsource Breakdown Voltage

40 V

Temel Ürün No

IAUC60

Typical Turnon Delay Time

3 ns

Input Capacitance Ciss Max Vds

2128pF @ 25V

Rds On Drainsource Resistance

3 mOhms

Gate Charge Qg Max Vgs

35nC @ 10V

Power Max

75W (Tc)

Continuous Drain Current Id

60A

Channel Mode

Enhancement

Transistor Polarity

N Channel

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Rds On Max Id Vgs

3mOhm @ 30A, 10V

Qualification

AEC-Q101

Drain To Source Voltage Vdss

40V

Pin Sayısı

8

Typical Turnoff Delay Time

16 ns

Transistor Type

2 N-Channel

Msl

MSL 1 - Unlimited

Part Aliases

IAUC60N04S6L030H SP004134512

Package Type

SuperSO8 5 x 6

Technology

Si

Maks. Çalışma Sıcaklığı

+ 175 C

Ürün Durumu

Active

Qg Gate Charge

27 nC

Channel Type

N

Kılıf / Paket

8-PowerVDFN