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FZ1200R17HP4B2BOSA2

Infineon Technologies

FZ1200R17HP4B2BOSA2

IGBTs Modules

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$893.04
  • 10+ pcs$842.49
  • 100+ pcs$794.80
  • 500+ pcs$749.81

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Kurşunsuz
Contains Lead
Halogen Free
Not Halogen Free
Jesd30 Code
R-PUFM-X7
Kılıf / Paket
Module
Terminal Formu
UNSPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
-40°C~150°C
Input Capacitance Cies Vce
97nF @ 25V
Current Collector Cutoff Max
5mA
Fabrika Tedarik Süresi
24 Weeks
Case Connection
ISOLATED
Currentcollector Ic Max
1200A
Voltage Collector Emitter Breakdown Max
1700V
Configuration
Half Bridge
Number Of Elements
2
Parça Durumu
Active
Terminal Sayısı
7
Power Max
7800W
Turn On Time
850 ns
Vceon Max Vge Ic
2.25V @ 15V, 1200A
Input
Standard
Transistor Element Material
SILICON
Polaritychannel Type
N-CHANNEL
Ntc Thermistor
No
Terminal Pozisyonu
UPPER
Turn Off Timenom Toff
1810 ns
Igbt Type
Trench Field Stop
Yüzey Montaj
NO
Transistor Application
POWER CONTROL
Montaj Tipi
Chassis Mount
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2002

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