FF750R17ME7DB11BPSA1

Specifications

Power Dissipation

20mW

Minimum Operating Temperature

- 40 C

Paket

Tray

Maks. Çalışma Sıcaklığı

+ 175 C

Vceon Max Vge Ic

1.85V @ 15V, 750A

Part Aliases

FF750R17ME7D_B11 SP005569131

Maximum Gate Emitter Voltage

±20V

Fabrika Paket Adedi

10

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Igbt Type

Trench Field Stop

Continuous Collector Current

750A

Collectoremitter Saturation Voltage

1.7V

Montaj Tipi

Chassis Mount

Current Collector Cutoff Max

5 mA

Configuration

Half Bridge Inverter

Ambalaj

Tray

Input Capacitance Cies Vce

78.1 nF @ 25 V

Continuous Collector Current At25 C

750 A

Collector Emitter Voltage Vceo Max

1700 V

Ntc Thermistor

Yes

Kılıf / Paket

Module

Ürün Tipi

IGBT Modules

Ürün Durumu

Active

Voltage Collector Emitter Breakdown Max

1700 V

Input

Standard

Power Max

20 mW

Currentcollector Ic Max

750 A

Maximum Collector Emitter Voltage

1700 V