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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 100A
- Gate Charge Qg Max Vgs
- 250nC @ 15V
- Ambalaj
- Tray
- ECCN Kodu
- EAR99
- Kılıf / Paket
- Module
- Nem Hassasiyeti (MSL)
- Not Applicable
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- RoHS Durumu
- ROHS3 Compliant
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 16 Weeks
- Parça Durumu
- Active
- Yükseklik
- 12.35mm
- Power Dissipation
- 20mW
- Yayın Yılı
- 2008
- Fet Type
- 2 N-Channel (Dual)
- Manufacturer Package Identifier
- AG-EASY1BM-2
- Vgsth Max Id
- 5.55V @ 40mA
- Number Of Channels
- 2
- Seri
- CoolSiC™+
- Drain To Source Voltage Vdss
- 1200V 1.2kV
- Montaj Tipi
- Chassis Mount
- Terminal Formu
- UNSPECIFIED
- Gate To Source Voltage Vgs
- 20V
- Jesd30 Code
- R-XUFM-X18
- Yüzey Montaj
- NO
- Rds On Max Id Vgs
- 11m Ω @ 100A, 15V
- Turn Off Delay Time
- 64.3 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 18
- Terminal Pozisyonu
- UPPER
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Turn On Delay Time
- 25.1 ns
- Fet Feature
- Silicon Carbide (SiC)
- Case Connection
- ISOLATED
- Input Capacitance Ciss Max Vds
- 7950pF @ 800V
- Operating Mode
- ENHANCEMENT MODE
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