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C3 ChipZentronix
FF100R12RT4HOSA1

Infineon Technologies

FF100R12RT4HOSA1

IGBTs Modules

In StockRoHS: Compliant

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Transistor Element Material
SILICON
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Fabrika Tedarik Süresi
16 Weeks
Power Max
555W
Parça Durumu
Active
Turn Off Timenom Toff
490 ns
Configuration
2 Independent
Voltage Collector Emitter Breakdown Max
1200V
Element Configuration
Dual
ECCN Kodu
EAR99
Kılıf / Paket
Module
Polaritychannel Type
N-CHANNEL
Input Capacitance Cies Vce
630nF @ 25V
Montaj Tipi
Chassis Mount
Kurşunsuz
Lead Free
Input
Standard
Yayın Yılı
2002
Vceon Max Vge Ic
2.15V @ 15V, 100A
Jesd30 Code
R-XUFM-X5
Ntc Thermistor
No
Yüzey Montaj
NO
Currentcollector Ic Max
100A
Terminal Formu
UNSPECIFIED
Pin Sayısı
7
Turn On Time
185 ns
Igbt Type
Trench Field Stop
Halogen Free
Not Halogen Free
Current Collector Cutoff Max
1mA
Case Connection
ISOLATED
Kurşunsuz Kodu
no
Terminal Sayısı
5
Terminal Pozisyonu
UPPER
Çalışma Sıcaklığı
-40°C~150°C
Transistor Application
POWER CONTROL
Number Of Elements
2

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