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DDB6U85N16LHOSA1

Infineon Technologies

DDB6U85N16LHOSA1

Rectifier Diode Array

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Technical team support

Specifications

Voltage Dc Reverse Vr Max
1600V
Operating Temperature Junction
150°C Max
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Kurşunsuz
Lead Free
Halogen Free
Not Halogen Free
Speed
Standard Recovery >500ns, > 200mA (Io)
Current Average Rectified Io
60A
Voltage Forward Vf Max If
1.44V @ 100A
Forward Current
100A
Case Connection
ISOLATED
Ambalaj
Tray
RoHS Durumu
ROHS3 Compliant
Current Reverse Leakage Vr
5mA @ 1600V
Operating Temperature Max
150°C
Terminal Formu
UNSPECIFIED
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Output Currentmax
104A
Diode Element Material
SILICON
Yayın Yılı
1999
Jesd30 Code
R-XUFM-X6
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
Module
Rep Pk Reverse Voltagemax
1600V
Yüzey Montaj
NO
Montaj Tipi
Chassis Mount
Diode Configuration
3 Independent
Number Of Phases
3
Parça Durumu
Active
Terminal Pozisyonu
UPPER
Diode Type
Standard
Number Of Elements
6
Max Repetitive Reverse Voltage Vrrm
1.6kV
Terminal Sayısı
6

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