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DD1200S45KL3B5NOSA1

Infineon Technologies

DD1200S45KL3B5NOSA1

Rectifier Diode Array

RoHS: Compliant

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Specifications

Yayın Yılı
2002
Rep Pk Reverse Voltagemax
4500V
Nem Hassasiyeti (MSL)
Not Applicable
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Applications
MEDIUM VOLTAGE HIGH POWER
Jesd30 Code
R-XUFM-X4
Parça Durumu
Active
Voltage Dc Reverse Vr Max
4500V
Number Of Elements
2
HTS Kodu
8541.10.00.80
Fabrika Tedarik Süresi
20 Weeks
Current Reverse Leakage Vr
1500A @ 2800V
RoHS Durumu
Non-RoHS Compliant
Kılıf / Paket
Module
Case Connection
ISOLATED
Montaj Tipi
Chassis Mount
Operating Temperature Junction
-50°C~125°C
Terminal Sayısı
4
Operating Temperature Max
125°C
Speed
Standard Recovery >500ns, > 200mA (Io)
Voltage Forward Vf Max If
3.1V @ 1200A
REACH Uyumluluk Kodu
not_compliant
Diode Configuration
2 Independent
Yüzey Montaj
NO
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Terminal Formu
UNSPECIFIED
Diode Element Material
SILICON
Diode Type
Standard
Ambalaj
Tray
Number Of Phases
1
Terminal Pozisyonu
UPPER
Output Currentmax
1200A

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